| PART |
Description |
Maker |
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system
4.0 AMPERE POWER TRANSISTORS
Plastic Medium-Power Silicon NPN Darlingtons
DARLINGTON POWER TRANSISTORS NPN SILICON
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
Motorola, Inc.
|
| SF5J42-8A SF5J42 SF5J42-8L SF5G42 SF5G42-8A SF5G42 |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
SILICON PLANAR TYPE (MEDIUM POWER CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| BD437 BD441 ON0194 |
From old datasheet system
4.0 AMPERES POWER TRANSISTORS
Plastic Medium Power Silicon NPN Transistor
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| 2N6388G 2N638706 2N6387 2N6387G 2N6388 |
Plastic Medium?Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ? 80 VOLTS
Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS
|
ONSEMI[ON Semiconductor]
|
| 40831 40830 40829 2N6467 |
Silicon N-P-N and P-N-P Medium-Power Transistors
|
New Jersey Semi-Conductor Products, Inc.
|
| L2SC2411KXLT1 |
Medium Power Transistor NPN silicon
|
Leshan Radio Company
|
| 2SB1132 |
PNP Silicon Medium Power Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MJ403312 |
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
|
Comset Semiconductor
|
| JAN2N1486 2N1485 2N1484 2N1483 |
NPN SILICON MEDIUM POWER TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| 2SB772Q |
PNP Silicon Medium Power Transistor
|
SeCoS Halbleitertechnologie GmbH
|
